summary n-channel v (br)dss = 30v; r ds(on) = 0.035 ;i d = 6.4a p-channel v (br)dss = -30v; r ds(on) = 0.048 ;i d = -5.4a description this new generation of trench mosfets from zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. this makes them ideal for high efficiency, low voltage, power management applications. features ? low on-resistance ? fast switching speed ? low threshold ? low gate drive ? low profile soic package applications ? motor drive ? lcd backlighting device marking zxmc 3a16 ZXMC3A16DN8 provisional issue e - october 2002 1 complementary 30v enhancement mode mosfet device reel tape width quantity per reel ZXMC3A16DN8ta 7 ?? 12mm 500 units ZXMC3A16DN8tc 13?? 12mm 2500 units ordering information q2 = p-channel q1 = n-channel so8 top view pinout
ZXMC3A16DN8 provisional issue e - october 2002 2 parameter symbol v alue unit junction to ambient (a)(d) r ja 100 c/w junction to ambient (b)(e) r ja 70 c/w junction to ambient (b)(d) r ja 60 c/w thermal resistance notes (a) for a dual device surface mounted on 25mm x 25mm fr4 pcb with coverage of single sided 1oz copper in still air conditions. (b) for a dual device surface mounted on fr4 pcb measured at t 10 sec. (c) repetitive rating 25mm x 25mm fr4 pcb, d=0.02 pulse width=300s - pulse width limited by maximum junction temperature. (d) for a dual device with one active die. (e) for dual device with 2 active die running at equal power. parameter symbol n-channel p-channel unit drain-source voltage v dss 30 -30 v gate-source voltage v gs 20 20 v continuous drain current@v gs =10v; t a =25 c (b)(d) @v gs =10v; t a =70 c (b)(d) @v gs =10v; t a =25 c (a)(d) i d 6.4 5.1 4.9 -5.4 -4.3 -4.1 a a a pulsed drain current (c) i dm 30 -25 a continuous source current (body diode)(b) i s 3.4 -3.2 a pulsed source current (body diode)(c) i sm 30 -25 a power dissipation at ta=25c (a)(d) linear derating factor p d 1.25 10 w mw/c power dissipation at ta=25c (a)(e) linear derating factor p d 1.8 14 w mw/c power dissipation at ta=25c (b)(d) linear derating factor p d 2.1 17 w mw/c operating and storage temperature range t j :t stg -55 to +150 c absolute maximum ratings.
ZXMC3A16DN8 provisional issue e - october 2002 3 characteristics
ZXMC3A16DN8 provisional issue e - october 2002 4 parameter symbol min. typ. max. unit conditions. static drain-source breakdown voltage v (br)dss 30 v i d =250 a, v gs =0v zero gate voltage drain current i dss 0.5 a v ds =30v, v gs =0v gate-body leakage i gss 100 na v gs = 20v, v ds =0v gate-source threshold voltage v gs(th) 1v i d =250 a, v ds =v gs static drain-source on-state resistance (1) r ds(on) 0.035 0.050 v gs =10v, i d =9a v gs =4.5v, i d =7.4a forward transconductance (1)(3) g fs 13.5 s v ds =15v,i d =9a dynamic (3) input capacitance c iss 796 pf v ds =25v,v gs =0v, f=1mhz output capacitance c oss 137 pf reverse transfer capacitance c rss 84 pf switching (2) (3) turn-on delay time t d(on) 3.0 ns v dd =15v, i d =3.5a r g =6.0 ? ,v gs =10v rise time t r 6.4 ns turn-off delay time t d(off) 21.6 ns fall time t f 9.4 ns gate charge q g 9.2 nc v ds =15v,v gs =5v, i d =3.5a total gate charge q g 17.5 nc v ds =15v,v gs =10v, i d =3.5a gate-source charge q gs 2.3 nc gate-drain charge q gd 3.1 nc source-drain diode diode forward voltage (1) v sd 0.85 0.95 v t j =25c, i s =5.1a, v gs =0v reverse recovery time (3) t rr 17.8 ns t j =25c, i f =3.5a, di/dt= 100a/ s reverse recovery charge (3) q rr 11.6 nc n-channel electrical characteristics (at t amb = 25c unless otherwise stated). notes (1) measured under pulsed conditions. width 300 s. duty cycle 2% . (2) switching characteristics are independent of operating junction temperature. (3) for design aid only, not subject to production testing.
ZXMC3A16DN8 provisional issue e - october 2002 5 parameter symbol min. typ. max. unit conditions. static drain-source breakdown voltage v (br)dss -30 v i d =-250 a, v gs =0v zero gate voltage drain current i dss -1.0 av ds =-30v, v gs =0v gate-body leakage i gss 100 na v gs = 20v, v ds =0v gate-source threshold voltage v gs(th) 1.0 v i d =-250 a, v ds =v gs static drain-source on-state resistance (1) r ds(on) 0.048 0.070 v gs =-10v, i d =-4.2a v gs =-4.5v, i d =-3.4a forward transconductance (1)(3) g fs 9.2 s v ds =-15v,i d =-4.2a dynamic (3) input capacitance c iss 970 pf v ds =-15 v, v gs =0v, f=1mhz output capacitance c oss 166 pf reverse transfer capacitance c rss 116 pf switching (2) (3) turn-on delay time t d(on) 1.95 ns v dd =-15v, i d =-1a r g =6.0 ? ,v gs =-10v rise time t r 3.82 ns turn-off delay time t d(off) 31.8 ns fall time t f 10.2 ns gate charge q g 12.9 nc v ds =-15v,v gs =-5v, i d =-4.2a total gate charge q g 24.9 nc v ds =-15v,v gs =-10v, i d =-4.2a gate-source charge q gs 2.67 nc gate-drain charge q gd 3.86 nc source-drain diode diode forward voltage (1) v sd -0.85 -0.95 v t j =25c, i s =-3.6a, v gs =0v reverse recovery time (3) t rr 21.2 ns t j =25c, i f =-2a, di/dt= 100a/ s reverse recovery charge (3) q rr 18.7 nc p-channel electrical characteristics (at t amb = 25c unless otherwise stated). notes (1) measured under pulsed conditions. width 300 s. duty cycle 2% . (2) switching characteristics are independent of operating junction temperature. (3) for design aid only, not subject to production testing.
ZXMC3A16DN8 provisional issue e - october 2002 6 0.1 1 10 0.01 0.1 1 10 0.1 1 10 0.01 0.1 1 10 1234 0.1 1 10 -50 0 50 100 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 0.01 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1 10 100 v gs 3v 2.5v 2v 1.5v 10v 4v output characteristics t = 25c v gs i d drain current (a) v ds drain-source voltage (v) 2v 1.5v 1v 10v 2.5v 3v 3.5v output characteristics t = 150c 4v i d drain current (a) v ds drain-source voltage (v) typical transfer characteristics v ds = 10v t = 25c t = 150c i d drain current (a) v gs gate-source voltage (v) normalised curves v temperature r ds(on) v gs = 10v i d =1.5a v gs(th) v gs =v ds i d = 250ua normalised r ds(on) and v gs( t h) tj junction temperature (c) 3v 2v 10v 4v 2.5v on-resistance v drain current t = 25c v gs r ds(on) drain-source on-resistance (?) i d drain current (a) t = 150c t = 25c source-drain diode forward voltage v sd source-drain voltage (v) i sd reverse drain current (a) n-channel typical characteristics
ZXMC3A16DN8 provisional issue e - october 2002 7 0.1 1 10 0 200 400 600 800 1000 1200 c rss c oss c iss v gs =0v f=1mhz c capacitance (pf) v ds -drain-sourcevoltage(v) 0 5 10 15 20 0 2 4 6 8 10 i d =3.5a v ds = 15v gate-sourcevoltagevgatecharge capacitance v drain-source voltage q - charge (nc) v gs gate-source voltage (v) n-channel typical characteristics
ZXMC3A16DN8 provisional issue e - october 2002 8 0.1 1 10 0.01 0.1 1 10 0.1 1 10 0.01 0.1 1 10 123 0.1 1 10 -50 0 50 100 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.01 0.1 1 10 0.01 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.01 0.1 1 10 100 1.5v 10v 4v 3.5v -v gs 2.5v 2v 3v output characteristics t=25c -v gs -i d drain current (a) -v ds drain-source voltage (v) 4v 3.5v 3v 2v 1.5v 10v 2.5v output characteristics t = 150c -i d drain current (a) -v ds drain-source voltage (v) typical transfer characteristics -v ds =10v t = 25c t = 150c -i d drain current (a) -v gs gate-source voltage (v) normalised curves v temperature r ds(on) v gs =-10v i d = -4.2a v gs(th) v gs =v ds i d = -250ua normalised r ds(on) and v gs(th) tj junction temperature (c) 1.5v 10v 3v 2v 4v 3.5v 2.5v on-resistance v drain current t=25c -v gs r ds(on) drain-source on-resistance (?) -i d drain current (a) t = 150c t = 25c source-drain diode forward voltage -v sd source-drain voltage (v) -i sd reverse drain current (a) p-channel typical characteristics
ZXMC3A16DN8 provisional issue e - october 2002 9 basicgatecharge waveform gatecharge testcircuit switching time waveforms switching time testcircuit charge q gs q gd q g 10v v g v v ds gs 12v 0.2f 50k 0.3f i d i g current regulator same as d.u.t d.u.t v ds v gs 90% 10% t r t f t d(off) t d(on) r g v gs r d v ds v cc pulse width < 1s duty factor0.1% - 0.1 1 10 0 200 400 600 800 1000 1200 1400 c rss c oss c iss v gs =0v f=1mhz c capacitance (pf) -v ds -drain-sourcevoltage(v) 0 5 10 15 20 25 0 2 4 6 8 10 -i d =4.2a -v ds = 15v gate-sourcevoltagevgatecharge capacitance v drain-source voltage q - charge (nc) -v gs gate-source voltage (v) p-channel typical characteristics
ZXMC3A16DN8 provisional issue e - october 2002 10 europe zetex plc fields new road chadderton oldham, ol9 8np united kingdom telephone (44) 161 622 4422 fax: (44) 161 622 4420 uk.sales@zetex.com zetex gmbh streitfeldstra?e 19 d-81673 mnchen germany telefon: (49) 89 45 49 49 0 fax: (49) 89 45 49 49 49 europe.sales@zetex.com americas zetex inc 700 veterans memorial hwy hauppauge, ny11788 usa telephone: (631) 360 2222 fax: (631) 360 8222 usa.sales@zetex.com asia pacific zetex (asia) ltd 3701-04 metroplaza, tower 1 hing fong road kwai fong hong kong telephone: (852) 26100 611 fax: (852) 24250 494 asia.sales@zetex.com these offices are supported by agents and distributors in major countries world-wide. this publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. the company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. for the latest product information, log on to www.zetex.com ? zetex plc 2002 dim inches millimetres min max min max a 0.053 0.069 1.35 1.75 a1 0.004 0.010 0.10 0.25 d 0.189 0.197 4.80 5.00 h 0.228 0.244 5.80 6.20 e 0.150 0.157 3.80 4.00 l 0.016 0.050 0.40 1.27 e 0.050 bsc 1.27 bsc b 0.013 0.020 0.33 0.51 c 0.008 0.010 0.19 0.25 0 8 0 8 h 0.010 0.020 0.25 0.50 package dimensions package outline controlling dimensions are in inches approx in millimetres
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